Cite
HARVARD Citation
Lee, K. et al. (2023). Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs. Advanced Electronic Materials. p. n/a. [Online].
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Lee, K. et al. (2023). Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs. Advanced Electronic Materials. p. n/a. [Online].