Cite
HARVARD Citation
Lan, J. et al. (2023). Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature. Advanced Electronic Materials. p. n/a. [Online].
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Lan, J. et al. (2023). Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature. Advanced Electronic Materials. p. n/a. [Online].