Cite
HARVARD Citation
Jeong, Y. et al. (2023). A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors. Physica status solidi. 220 (5), p. n/a. [Online].
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Jeong, Y. et al. (2023). A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors. Physica status solidi. 220 (5), p. n/a. [Online].