Effect of Oxygen Impurity on Thermal Conduction Rate of Polycrystalline Si3N4. Issue 10 (21st October 2021)

• Record Type: Journal Article
• Authors: Dow, Hwan Soo; Na, Moonkyong; Jung, Yeon Wook; Geun Jo, Seung; Lee, Jung Woo
• Is Part Of: Advanced engineering materials. Volume 23:Issue 10(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-10-21
• Subjects: Materials -- Periodicals; 620.11
• DOI: 10.1002/adem.202170037
• Languages: English
• ISSNs: 1438-1656

Abstract

Abstract : Heat transfer with homogeneous structures of Si3N4 system and the effects of oxygen defects in the Si3N4 grains are reported by Jung Woo Lee and co‐workers in article number 2100566 . The oxygen defects in the grains are moving to the surface of the grains and effectively captured by oxygen getter. The inhibition of the Si3N4 grain oxidization improves a spontaneous dissipation of thermal energy.