Thermoelectric properties of materials near the band crossing line in Mg2Sn–Mg2Ge–Mg2Si system. (15th January 2016)

• Record Type: Journal Article
• Authors: Mao, Jun; Kim, Hee Seok; Shuai, Jing; Liu, Zihang; He, Ran; Saparamadu, Udara; Tian, Fei; Liu, Weishu; Ren, Zhifeng
• Is Part Of: Acta materialia. Volume 103(2016)
• Page Start: 633
• Page End: 642
• Publication Date: 2016-01-15
• Subjects: Mg2Sn–Mg2Ge–Mg2Si -- Thermoelectric -- Output power -- Efficiency; Materials -- Periodicals; Materials science -- Periodicals; Materials -- Mechanical properties -- Periodicals; Metallurgy -- Periodicals; Chemistry, Inorganic -- Periodicals; 620.112
• DOI: 10.1016/j.actamat.2015.11.006
• Languages: English
• ISSNs: 1359-6454

Abstract

Abstract: Thermoelectric properties of materials with compositions on and near the band crossing line connecting Mg2 Sn0.765 Ge0.22 Sb0.015 and Mg2 Sn0.685 Si0.3 Sb0.015 in the Mg2 Sn–Mg2 Ge–Mg2 Si system are investigated. Although ZT s are very similar, power factors are different. On the line, the power factor decreases from Mg2 Sn0.765 Ge0.22 Sb0.015 to Mg2 Sn0.685 Si0.3 Sb0.015, and off the line, the power factor also decreases. The output power and energy conversion efficiency are calculated using engineering power factor ( PF ) eng and figure of merit ( ZT ) eng . It is shown that although similar energy conversion efficiency of ∼11% could be achieved for all compositions studied, the output power are different, increasing from ∼9.1 W cm −2 for Mg2 Sn0.685 Si0.3 Sb0.015 to ∼10.3 W cm −2 for Mg2 Sn0.765 Ge0.22 Sb0.015, due to the different power factors. Graphical abstract: