The temperature and size effect on the electrical resistivity of Cu/V multilayer films. (March 2017)

• Record Type: Journal Article
• Authors: Wang, P.P.; Wang, X.J.; Du, J.L.; Ren, F.; Zhang, Y.; Zhang, X.; Fu, E.G.
• Is Part Of: Acta materialia. Volume 126(2017)
• Page Start: 294
• Page End: 301
• Publication Date: 2017-03
• Subjects: Electrical resistivity -- Multilayer thin films -- Interface -- Grain boundary -- Temperature coefficient of resistivity; Materials -- Periodicals; Materials science -- Periodicals; Materials -- Mechanical properties -- Periodicals; Metallurgy -- Periodicals; Chemistry, Inorganic -- Periodicals; 620.112
• DOI: 10.1016/j.actamat.2016.12.018
• Languages: English
• ISSNs: 1359-6454

Abstract

Abstract: The electrical resistivity of sputter-deposited Cu/V multilayer films with different individual layer thicknesses varying from 2.5 to 100 nm was evaluated in the temperature range of 150–300 K. The temperature coefficient of resistivity (TCR) of Cu/V multilayer was compared based on the semi-classical theory of Dimmich model. A new model has been proposed to describe the relationship between the resistivity and the individual layer thickness of metallic multilayer film by considering both interface scattering and grain boundary scattering based on Fuchs-Sondheimer method and Mayadas-Shatzkes method. Graphical abstract: Image 1