Direct observation of NiSi lateral growth at the epitaxial θ-Ni2Si/Si(1 0 0) interface. (15th October 2015)

• Record Type: Journal Article
• Authors: El Kousseifi, M.; Hoummada, K.; Epicier, T.; Mangelinck, D.
• Is Part Of: Acta materialia. Volume 99(2015)
• Page Start: 1
• Page End: 6
• Publication Date: 2015-10-15
• Subjects: Ni silicide -- Lateral growth -- Interface -- Precipitate shape -- Model; Materials -- Periodicals; Materials science -- Periodicals; Materials -- Mechanical properties -- Periodicals; Metallurgy -- Periodicals; Chemistry, Inorganic -- Periodicals; 620.112
• DOI: 10.1016/j.actamat.2015.07.062
• Languages: English
• ISSNs: 1359-6454

Abstract

Graphical abstract: Abstract: The first stages of NiSi phase formation at the expense of θ -Ni2 Si and a Si substrate are investigated by transmission electron microscopy (TEM). These measurements show the presence of a low density of NiSi particles at the θ -Ni2 Si/Si(1 0 0) interface and allow their complete shape to be determined. This stage corresponds to the lateral growth of NiSi at the epitaxial θ -Ni2 Si/Si(1 0 0) interface. The shape of these particles is in agreement with the predicted models, and the shapes were fitted by an analytical expression derived from the model developed by Klinger et al.