Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation. (1st August 2018)

• Record Type: Journal Article
• Authors: Sato, K.; Yasuda, H.; Ichikawa, S.; Imamura, M.; Takahashi, K.; Hata, S.; Matsumura, S.; Anada, S.; Lee, J.-G.; Mori, H.
• Is Part Of: Acta materialia. Volume 154(2018)
• Page Start: 284
• Page End: 294
• Publication Date: 2018-08-01
• Subjects: Transition-metal silicide -- Synchrotron radiation -- Transmission electron microscopy -- Electronic band structure -- Electronic excitation; Materials -- Periodicals; Materials science -- Periodicals; Materials -- Mechanical properties -- Periodicals; Metallurgy -- Periodicals; Chemistry, Inorganic -- Periodicals; 620.112
• DOI: 10.1016/j.actamat.2018.05.045
• Languages: English
• ISSNs: 1359-6454

Abstract

Abstract: The synthesis of platinum silicide at a Pt/SiO x interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt2 Si, was successfully formed at the Pt/SiO x interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiO x . The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results. Graphical abstract: Image 1