Cite
HARVARD Citation
Takahashi, H. et al. (2021). Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications. Electronics letters. 57 (21), pp. 810-812. [Online].
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Takahashi, H. et al. (2021). Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications. Electronics letters. 57 (21), pp. 810-812. [Online].