Anomalous Superconducting Proximity Effect in Bi2Se3/FeSe0.5Te0.5 Thin‐Film Heterojunctions. Issue 6 (26th December 2021)

• Record Type: Journal Article
• Authors: Zhang, Yalin; Zhao, Wei‐Min; Zhang, Chunchen; Wang, Peng; Wang, Tong; Li, Shao‐Chun; Xing, Zhongwen; Xing, Dingyu
• Is Part Of: Advanced materials. Volume 34:Issue 6(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-12-26
• Subjects: Bi 2Se 3/FeSe 0.5Te 0.5 heterostructures -- electrical transport -- superconducting proximity effect -- superconductors -- topological insulators; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202107799
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: The superconducting proximity effect (SPE) induces a superconductivity transition in otherwise non‐superconducting thin films in proximity with a superconductor. The SPE usually occurs in real space and decays exponentially with film thickness. Herein, an abnormal SPE in a topological insulator (TI)/superconductor heterostructure is unveiled, which is attributed to the topologically protected surface state. Surprisingly, such abnormal SPE occurs in momentum space regardless of the TI film thickness, as long as the topological surface states are robust and form a continuous conduction loop. Combining transport measurements and scanning tunneling microscopy/spectroscopy techniques, the SPE in Bi2 Se3 /FeSe0.5 Te0.5 heterostructures is explored, where Bi2 Se3 is an ideal 3D topological insulator and FeSe0.5 Te0.5 a typical iron‐based superconductor. As the thickness of the Bi2 Se3 thin film exceeds 400 nm, there still exists SPE‐induced superconductivity on the surface of Bi2 Se3 thin film with a transition temperature T c not less than 10 K. Such an extraordinary behavior is induced by the unique properties of topologically protected surface states of Bi2 Se3 . This research deepens the understanding of the important role of topologically protected surface states in the SPE. Abstract : An anomalous superconducting proximity effect (SPE) is unveiled in topological insulator (TI)/superconductor Bi2 Se3 /FeSe0.5 Te0.5 heterostructures. In contrast with the normal SPE that decays with thickness, such an effect occurs in momentum space regardless of the TI film thickness, as long as the topologically protected surface states are robust and form a continuous conduction loop.