On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide. Issue 5 (17th May 2021)

• Record Type: Journal Article
• Authors: Lederer, Maximilian; Olivo, Ricardo; Lehninger, David; Abdulazhanov, Sukhrob; Kämpfe, Thomas; Kirbach, Sven; Mart, Clemens; Seidel, Konrad; Eng, Lukas M.
• Other Names: Barabash Sergey V. guestEditor.; Fichtner Simon guestEditor.; Park Min Hyuk guestEditor.; Schenk Tony guestEditor.
• Is Part Of: Physica status solidi. Volume 15:Issue 5(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-05-17
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.202170022
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : With the help of transmission Kikuchi diffraction the major physical mechanism of antiferroelectric‐like behavior as well as of the wake‐up effect is determined by Maximilian Lederer, Konrad Seidel, and co‐workers in article number 2100086 . Furthermore, guidelines on how to influence this behavior by crystallographic texture and adjacent layers, as well as process conditions are identified. Finally, electric‐field‐induced crystallization is discovered as a new effect in hafnium oxide thin films.