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HARVARD Citation
Yin, X. et al. (2023). Magnetoelectric memory cell based on 0.5Ba(Zr0.2Ti0.8)O3-0.5Ba0.7Ca0·3TiO3/Fe65Co35 thin films. Microelectronics journal. p. . [Online].
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Yin, X. et al. (2023). Magnetoelectric memory cell based on 0.5Ba(Zr0.2Ti0.8)O3-0.5Ba0.7Ca0·3TiO3/Fe65Co35 thin films. Microelectronics journal. p. . [Online].