Acceleration of NO2 gas sensitivity in two-dimensional SnSe2 by Br doping. Issue 11 (22nd February 2023)

• Record Type: Journal Article
• Authors: Choi, Myung Sik; Bang, Geukchan; Lee, Jeongmin; Kim, Inseo; Bang, Joonho; Lee, Seung Yong; Lee, Kimoon; Lee, Kyu Hyoung
• Is Part Of: Dalton transactions. Volume 52:Issue 11(2023)
• Page Start: 3386
• Page End: 3390
• Publication Date: 2023-02-22
• Subjects: Chemistry, Inorganic -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Chemistry, Inorganic -- Periodicals; 546.05
• DOI: 10.1039/d2dt03784j
• Languages: English
• ISSNs: 1477-9226

Abstract

Abstract : We clarified that Br doping can be an effective approach to tune the surface Fermi level potential that is responsible for the charge transfer efficiency between the sensing material and gas molecule. Abstract : The authors report a Br doping effect on the NO2 gas sensing properties of a two-dimensional (2D) SnSe2 semiconductor. Single crystalline 2D SnSe2 samples with different Br contents are grown by a simple melt-solidification method. By analyzing the structural, vibrational as well as electrical properties, it can be confirmed that the Br impurity substitutes on the Se-site in SnSe2 serving as an efficient electron donor. When we measure the change of resistance under a 20 ppm NO2 gas flow condition at room temperature, both responsivity and response time are drastically improved by Br doping from 1.02% and 23 s to 3.38% and 15 s, respectively. From these results, it can be concluded that Br doping plays a key role for encouraging the charge transfer efficiency from the SnSe2 surface to the NO2 molecule by elaborating Fermi level in 2D SnSe2 .