Cite
HARVARD Citation
Han, T. et al. (2023). Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio. Microelectronics journal. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Han, T. et al. (2023). Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio. Microelectronics journal. p. . [Online].