Porous and Water Stable 2D Hybrid Metal Halide with Broad Light Emission and Selective H2O Vapor Sorption. (10th February 2023)

• Record Type: Journal Article
• Authors: Azmy, Ali; Li, Shunran; Angeli, Giasemi K.; Welton, Claire; Raval, Parth; Li, Min; Zibouche, Nourdine; Wojtas, Lukasz; Reddy, G. N. Manjunatha; Guo, Peijun; Trikalitis, Pantelis N.; Spanopoulos, Ioannis
• Is Part Of: Angewandte Chemie. Volume 135:Number 12(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-02-10
• Subjects: Broad Light Emission -- Gas Separation -- Microporous Materials -- Semiconductors -- Water Stability; Chemistry -- Periodicals; 540
• DOI: 10.1002/ange.202218429
• Languages: English
• ISSNs: 0044-8249

Abstract

Abstract: In this work we report a strategy for generating porosity in hybrid metal halide materials using molecular cages that serve as both structure‐directing agents and counter‐cations. Reaction of the [2.2.2] cryptand (DHS) linker with Pb II in acidic media gave rise to the first porous and water‐stable 2D metal halide semiconductor (DHS)2 Pb5 Br14 . The corresponding material is stable in water for a year, while gas and vapor‐sorption studies revealed that it can selectively and reversibly adsorb H2 O and D2 O at room temperature (RT). Solid‐state NMR measurements and DFT calculations verified the incorporation of H2 O and D2 O in the organic linker cavities and shed light on their molecular configuration. In addition to porosity, the material exhibits broad light emission centered at 617 nm with a full width at half‐maximum (FWHM) of 284 nm (0.96 eV). The recorded water stability is unparalleled for hybrid metal halide and perovskite materials, while the generation of porosity opens new pathways towards unexplored applications ( e.g . solid‐state batteries) for this class of hybrid semiconductors. Abstract : Porous and water‐stable hybrid semiconductors pose as multifunctional materials combining traits that are essential for demanding commercial applications. A strategy for generating porosity in hybrid metal halide semiconductors by using molecular cages as both structure‐directing agents and counter‐cations is reported. This strategy gave rise to a direct band gap semiconductor, with record water stability and selective vapor‐sorption.