Highly Sensitive Self‐Powered 2D Perovskite Photodiodes with Dual Interface Passivations. (22nd December 2022)

• Record Type: Journal Article
• Authors: Ji, Ting; Zhang, Haibo; Guo, Jiahao; Wang, Yingkui; Shi, Linlin; Wu, Yukun; Wang, Wenyan; Li, Guohui; Wen, Rong; Xiao, Liantuan; Su, Qingmei; Xu, Bingshe; Chen, Hongzheng; Cui, Yanxia
• Is Part Of: Advanced functional materials. Volume 33:Number 10(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-12-22
• Subjects: 2D perovskites -- Al 2O 3 -- passivations -- photodetectors -- photodiodes; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202210548
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: 2D perovskites have attracted intensive attention by virtue of their excellent optical and electrical properties along with good stabilities. Herein, a highly sensitive self‐powered photodiode based on (PEA)2 (MA)4 Pb5 I16 (PEA=C6 H5 (CH2 )NH3, MA=CH3 NH3 ) 2D perovskite is demonstrated by dual interface passivations. The Al2 O3 bottom passivation can reduce the pinhole defects in the 2D perovskite film and suppress the trap‐related recombination loss, bringing forward much reduced dark current and increased photocurrent. The poly (methyl methacrylate) (PMMA) top passivation can encapsulate the 2D perovskite film and thus improve the stability of the device. These results show that the 2D perovskite‐based photodiode with dual interface passivations exhibits a large photo‐to‐dark current ratio of 10 7, a fast response speed of 597 ns and a linear dynamic range of 160 dB without bias. Responsivity ( R ) and detectivity ( D* ) respectively reach 0.36 A W −1 and 5.4 × 10 12 Jones under 532 nm laser illumination at a power density of 1.5 nW cm −2 . Moreover, the dual interface passivated device exhibits good stabilities. This study paves the road for developing low‐cost, low‐power, solution processed image sensors. Abstract : Bottom Al2 O3 and top poly (methyl methacrylate) (PMMA) passivations are adopted to improve the performance of the 2D perovskite‐based photodiode. Much suppressed dark current and increased photocurrent are obtained by Al2 O3 passivation. Device stability is improved by PMMA passivation. Responsivity and detectivity reach 0.36 A W −1 and 5.4 × 10 12 Jones under 532 nm laser illumination at a power density of 1.5 nW cm −2 .