Monolithic Tandem Vertical Electrochemical Transistors for Printed Multi‐Valued Logic. Issue 9 (1st January 2023)

• Record Type: Journal Article
• Authors: Lim, Dong Un; Jo, Sae Byeok; Cho, Jeong Ho
• Is Part Of: Advanced materials. Volume 35:Issue 9(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-01-01
• Subjects: electrochemical transistors -- ion penetration -- multivalued transistors -- ternary logic -- vertical transistors; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202208757
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Organic electrochemical transistors (OECTs) have recently emerged as a feasible candidate to realize the next generation of printable electronics. Especially, their chemical versatility and the unique redox‐based operating principle have provided new possibilities in high‐functioning logic circuitry beyond the traditional binary Boolean logic. Here, a simple strategy to electrochemically realize monolithic multi‐valued logic transistors is presented, which is one of the most promising branches of transistor technology in the forthcoming era of hyper Moore's law. A vertically stacked heterogeneous dual‐channel architecture is introduced with a patterned reference electrode, which enables a facile manifestation of stable and equiprobable ternary logic states with a reduced transistor footprint. The dual‐ion‐penetration mechanism coupled with ultrashort vertical channel even allows a very‐high accessing frequency to multiple logic states reaching over 10 MHz. Furthermore, printed arrays of ternary logic gates with full voltage swing within 1 V are demonstrated. Abstract : A new design of high‐speed electrochemical ternary logic transistor is presented. A vertically stacked dual channel heterostructure enables a clear manifestation of multiple logic states in 1 V input–output voltage ranges, through a simple chemical‐tuning of semiconductor materials.