Cite
HARVARD Citation
Chen, H. et al. (2023). Introduction of defects in hexagonal boron nitride for vacancy-based 2D memristors. Nanoscale. 15 (9), pp. 4309-4316. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Chen, H. et al. (2023). Introduction of defects in hexagonal boron nitride for vacancy-based 2D memristors. Nanoscale. 15 (9), pp. 4309-4316. [Online].