Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays. Issue 5 (5th January 2023)

• Record Type: Journal Article
• Authors: Jin, Taewon; Kim, Sanghyeon; Han, Jae-Hoon; Ahn, Dae-Hwan; An, Seong Ui; Noh, Tae Hyeon; Sun, Xinkai; Kim, Cheol Jun; Park, Juhyuk; Kim, Younghyun
• Is Part Of: Nanoscale advances. Volume 5:Issue 5(2023)
• Page Start: 1316
• Page End: 1322
• Publication Date: 2023-01-05
• Subjects: 620.5
• DOI: 10.1039/d2na00713d
• Languages: English
• ISSNs: 2516-0230

Abstract

Abstract : We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors by introducing a non-volatile programmable ferroelectric material, HfZrO2 into the gate stack of the TFT. Abstract : We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO2 (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.