Correction: Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer. Issue 18 (17th February 2023)

Record Type:: Journal Article
Title:: Correction: Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer. Issue 18 (17th February 2023)
Main Title:: Correction: Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer
Authors:: Kim, Se Hyun
Yu, Geun Taek
Park, Geun Hyeong
Lee, Dong Hyun
Park, Ju Yong
Yang, Kun
Lee, Eun Been
Lee, Je In
Park, Min Hyuk
Abstract:: Abstract : Correction for 'Interfacial engineering of a Mo/Hf0.3 Zr0.7 O2 /Si capacitor using the direct scavenging effect of a thin Ti layer' by Se Hyun Kim et al., Chem. Commun., 2021, 57, 12452–12455, ; https://doi.org/10.1039/D1CC04966F .
Is Part Of:: Chemical communications. Volume 59:Issue 18(2023)
Journal:: Chemical communications
Issue:: Volume 59:Issue 18(2023)
Issue Display:: Volume 59, Issue 18 (2023)
Year:: 2023
Volume:: 59
Issue:: 18
Issue Sort Value:: 2023-0059-0018-0000
Page Start:: 2668
Page End:: 2668
Publication Date:: 2023-02-17
Subjects:: Chemistry -- Periodicals
540
Journal URLs:: http://pubs.rsc.org/en/journals/journalissues/cc ↗
http://www.rsc.org/ ↗
DOI:: 10.1039/d3cc90042h ↗
Languages:: English
ISSNs:: 1359-7345
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - 3139.350000
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Ingest File:: 26118.xml