An efficient and thermally stable near-infrared phosphor derived from the Ln3ScInGa3O12:Cr3+ (Ln = La, Gd, Y, and Lu) garnet family. Issue 9 (10th February 2023)

• Record Type: Journal Article
• Authors: Liao, Zurong; Li, Chaojie; Zhong, Jiyou; Li, Yang; Zhao, Weiren
• Is Part Of: Dalton transactions. Volume 52:Issue 9(2023)
• Page Start: 2853
• Page End: 2862
• Publication Date: 2023-02-10
• Subjects: Chemistry, Inorganic -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Chemistry, Inorganic -- Periodicals; 546.05
• DOI: 10.1039/d2dt04126j
• Languages: English
• ISSNs: 1477-9226

Abstract

Abstract : The Ln3 ScInGa3 O12 :Cr 3+ (Ln = La, Gd, Y, and Lu) garnet family with an emission peak ranging from 726 to 822 nm was reported, among which the Y3 ScInGa3 O12 :Cr 3+ exhibits high efficiency and outstanding thermal stability. Abstract : A broadband near-infrared (NIR) light source based on a phosphor-converted light-emitting diode (pc-LED) has attracted increasing interest to be used in non-destructive examination, security-monitoring and medical diagnosis fields, which stimulates the exploration of NIR phosphors with high performance. Herein, a series of Cr 3+ -activated garnet Ln3 ScInGa3 O12 :Cr 3+ (Ln = La, Gd, Y, and Lu) phosphors were reported, allowing an emission peak ranging from 726 to 822 nm. Among them, Y3 ScInGa3 O12 :Cr 3+ with an optimized Cr 3+ -doping concentration of 6 mol% exhibits a high internal quantum efficiency (IQE = 83.1%) and excellent absorption efficiency (AE = 44.2%) under 450 nm blue light excitation, enabling an external quantum efficiency as high as 36.7%. Moreover, this material can maintain 93.0% of the initial intensity when heated up to 423 K, implying outstanding thermal stability. Finally, a prototype NIR pc-LED device was fabricated by coating the optimized phosphor on a 455 nm LED chip, which generates a broadband NIR emission with a peak located at 765 nm and a full width at half maximum of 127 nm. The NIR output power and NIR photoelectric conversion efficiency of this device were found to be 38.01 mW and 11.0%, respectively, under 100 mA driving current, demonstrating the feasibility of this material to be applied in NIR pc-LEDs.