Improved thermoelectric properties in n-type polycrystalline SnSe0.95 by PbCl2 doping. Issue 5 (17th February 2023)

• Record Type: Journal Article
• Authors: Zhang, Xin; Cai, Jianfeng; Tan, Xiaojian; Zhuang, Shuai; Huang, Wenjie; Zhang, Zongwei; Hu, Haoyang; Wu, Jiehua; Liu, Guo-Qiang; Jiang, Jun
• Is Part Of: Materials advances. Volume 4:Issue 5(2023)
• Page Start: 1372
• Page End: 1377
• Publication Date: 2023-02-17
• Subjects: 620.11
• DOI: 10.1039/d2ma01102f
• Languages: English
• ISSNs: 2633-5409

Abstract

Abstract : PbCl2 doping effectively improves the ZT value of n-type SnSe0.95 by boosting the carrier concentration and suppressing the lattice thermal conductivity. Abstract : Polycrystalline tin selenide (SnSe) has attracted extensive attention because of the better mechanical performance and simpler preparation conditions than those of its single crystal. However, the low carrier concentration severely limits optimization of the thermoelectric performance, especially for n-type polycrystalline SnSe. In this work, we use the PbCl2 compound as the electron dopant to prepare n-type SnSe0.95 -based materials through ball milling and hot-pressing processes. It is found that PbCl2 effectively boosts the room-temperature carrier concentration from 2.6 × 10 17 cm −3 to 5.3 × 10 19 cm −3 . The electronic transport measurements parallel to the pressure direction indicate an enhanced power factor that increases from 0.3 μW cm −1 K −2 in pristine SnSe0.95 to 7.3 μW cm −1 K −2 in the 6% PbCl2 doped sample. The TEM images demonstrate that a large number of dislocations and grain boundaries exist in the polycrystalline, which can strengthen the phonon scattering and suppress the lattice thermal conductivity. Consequently, a maximum ZT of 1.13 at 823 K is obtained in the n-type SnSe0.95 + 6% PbCl2 polycrystalline parallel to the hot-pressing direction.