Atomic‐Scale Observation of the Local Structure and 1D Quantum Effects in vdW Stacking Mo6Te6 Nanowires. Issue 6 (4th December 2022)

• Record Type: Journal Article
• Authors: Li, Yuang; Wu, Di; Wang, Dongli; Zhang, Yinuo; Min, Tai; Pan, Yi
• Is Part Of: Advanced materials interfaces. Volume 10:Issue 6(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-12-04
• Subjects: Mo 6Te 6 -- nanowires -- van Hove singularities -- vdW stacking; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.202202043
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: The sub‐nanometer‐diameter transitional‐metal chalcogenides (M6 X6 ) molecular wires are ideal 1D quantum systems. The electronic properties of such system are very sensitive to the interface interaction and local imperfection. Here, the atomic structure and local electronic structure of van der Waals (vdW) stacking Mo6 Te6 nanowires fabricated by using molecular beam epitaxy are reported. Atomic‐resolution scanning tunneling microscopy measurement shows that the vdW interface distance varies from 0.71 to 1.05 nm when Mo6 Te6 wires stacked on graphite, MoTe2, and Mo6 Te6 surfaces. Scanning tunneling spectroscopy confirmed the 1D quantum effect of van Hove singularity and Tomonaga–Luttinger liquid behavior at 77.8 K. Single Te vacancies and their effect to the local structure distortion are observed as well. These observations shed light on the local structure and quantum effects of the M6 X6 nanowire materials, which may find applications in future electronic devices. Abstract : By combination of vacuum annealing and fast cooling of epitaxial MoTe2 ultrathin films, Mo6 Te6 nanowires stacking on varying van der Waals surface are obtained. Through scanning tunneling microscopy measurement, local defects in forms of single Te vacancies or axial twist are observed. Moreover, the 1D electronic properties of pristine and defective Mo6 Te6 nanowires are confirmed.