Cite
HARVARD Citation
Zhao, Z. et al. (2023). The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage. Applied physics express. p. . [Online].
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Zhao, Z. et al. (2023). The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage. Applied physics express. p. . [Online].