Temperature dependent black phosphorus transistor and memory. (6th March 2023)

• Record Type: Journal Article
• Authors: Kumar, Arun; Viscardi, Loredana; Faella, Enver; Giubileo, Filippo; Intonti, Kimberly; Pelella, Aniello; Sleziona, Stephan; Kharsah, Osamah; Schleberger, Marika; Di Bartolomeo, Antonio
• Is Part Of: Nano express. Volume 4:Number 1(2023)
• Publication Date: 2023-03-06
• Subjects: black phosphorus -- field-effect transistors -- temperature -- memories -- hysteresis; Nanotechnology -- Periodicals; Nanoscience -- Periodicals; 620.5
• DOI: 10.1088/2632-959X/acbe11
• Languages: English
• ISSNs: 2632-959X

Abstract

Abstract: We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the gate voltage sweep range, is 283 cm 2 V −1 s −1 at 150 K and reduces to 33 cm 2 V −1 s −1 at 340 K, when the voltage gate sweep range is ± 50 V. The transfer characteristics show a hysteresis width that increases with the temperature and is exploited to enable non-volatile memories with a wider programming window at higher temperatures.