Cite
HARVARD Citation
Yamamoto, Y. et al. (2023). High Crystallinity Ge Growth on Si (111) and Si (110) by Using Reduced Pressure Chemical Vapor Deposition. ECS journal of solid state science and technology. p. . [Online].
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Yamamoto, Y. et al. (2023). High Crystallinity Ge Growth on Si (111) and Si (110) by Using Reduced Pressure Chemical Vapor Deposition. ECS journal of solid state science and technology. p. . [Online].