A very low lasing threshold of DABNA derivatives with DFB structures. (8th December 2022)

• Record Type: Journal Article
• Authors: Mamada, Masashi; Maedera, Satoshi; Oda, Susumu; Nguyen, Thanh Ba; Nakanotani, Hajime; Hatakeyama, Takuji; Adachi, Chihaya
• Is Part Of: Materials chemistry frontiers. Volume 7:Number 2(2023)
• Page Start: 259
• Page End: 266
• Publication Date: 2022-12-08
• Subjects: Materials science -- Periodicals; Chemistry -- Periodicals; 540
• DOI: 10.1039/d2qm01040b
• Languages: English
• ISSNs: 2052-1529

Abstract

Abstract : A low lasing threshold of up to 0.27 μJ cm −1 was achieved by using TADF materials. Advanced light amplification architectures composed of dual DABNA derivatives were also demonstrated. Abstract : For elucidating the potential of the light amplification properties of thermally activated delayed fluorescence (TADF) materials, distributed feedback (DFB) laser devices using DABNA derivatives having a multiple-resonance effect were fabricated. We demonstrated a very low lasing threshold of 0.27 μJ cm −1, which is the best performance in TADF materials, for 6 wt%-DABNA-2 doped in an mCBP host layer combined with a mixed-order DFB structure. Furthermore, by focusing on the photophysical properties of the aggregated states of DABNA derivatives, advanced light amplification architectures composed of dual DABNA derivatives were examined. Consequently, the DABNA-based films also provided remarkably low lasing thresholds at high concentrations.