Cite
HARVARD Citation
Yin, J. et al. (2023). A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node. Active and passive electronic components. p. . [Online].
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Yin, J. et al. (2023). A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node. Active and passive electronic components. p. . [Online].