Cite
HARVARD Citation
Araki, T. et al. (2023). Direct growth of GaN film on ScAlMgO4 substrate by radio-frequency plasma-excited molecular beam epitaxy. Applied physics express. p. . [Online].
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Araki, T. et al. (2023). Direct growth of GaN film on ScAlMgO4 substrate by radio-frequency plasma-excited molecular beam epitaxy. Applied physics express. p. . [Online].