Cite
HARVARD Citation
Shekhar, D. et al. (2023). Study of ambipolar and linearity behavior of the misaligned double gate-drain dopant-free Nano-TFET: Design and performance enhancement. Microelectronics journal. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Shekhar, D. et al. (2023). Study of ambipolar and linearity behavior of the misaligned double gate-drain dopant-free Nano-TFET: Design and performance enhancement. Microelectronics journal. p. . [Online].