Sn-doped g-C3N4 as a novel photoelectrocatalyst for water oxidation. (May 2023)

• Record Type: Journal Article
• Authors: Aboubakr, Ahmed Esmail A.; Khan, Malik Dilshad; Revaprasadu, Neerish; Millet, Pierre; Hung, Chen-Hsiung; El Rouby, Waleed M.A.
• Is Part Of: Journal of physics and chemistry of solids. Volume 176(2023)
• Publication Date: 2023-05
• Subjects: Sn-doped g-C3N4 -- Photoanode -- Water splitting -- Photoelectrochemical impedance spectroscopy; Solids -- Periodicals; Solides -- Périodiques; Solids; Periodicals; 530.41
• DOI: 10.1016/j.jpcs.2023.111242
• Languages: English
• ISSNs: 0022-3697

Abstract

Abstract: The photocatalytic performance of graphitic carbon nitride can be enhanced multifold by introducing suitable dopants. Here we report incorporating a cost-effective, non-toxic and abundant element, i.e., tin, in elongated semiconducting carbon nitride (g-C3 N4 ). A novel procedure was used to introduce varying amounts of tin to the g-C3 N4 framework. The new photocatalysts (Sn–CN) were characterized by X-Ray Diffraction (XRD) and FT-IR measurements, confirming the absence of tin oxide and incorporation of tin in the g-C3 N4 backbone. The SEM, EDX, TEM and XPS measurements demonstrated the elongated morphology and the presence of tin in the composite materials. BET measurements showed a relative increase in the specific surface area for the composites. The optical measurements showed enhanced solar light absorption and promoted the charge carrier's separation after the insertion of Sn to g-C3 N4 . Photoelectrochemical water dissociation measurements showed that 10% tin doping increased the activity of g-C3 N4 to water photo-oxidation about four times. This improvement was analyzed by electrochemical impedance spectroscopy measurements. Highlights: g-C3 N4 materials was synthesized from melamine. The as-prepared material was doped with tin to adjust the band gap. 10% Sn doping showed a 12-fold electron-hole separation, compared to pristine g-C3 N4. PEC water splitting activity was enhanced by 4 times after doping g-C3 N4 with 10% Sn. Mott–Schottky plots were used to determine the conduction and valence bands' values.