Cite
HARVARD Citation
Tan, W. et al. (2023). An in-depth investigation of gate leakage current degradation mechanisms in 1.2 kV 4H-SiC power MOSFETs. Microelectronics and reliability. p. . [Online].
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Tan, W. et al. (2023). An in-depth investigation of gate leakage current degradation mechanisms in 1.2 kV 4H-SiC power MOSFETs. Microelectronics and reliability. p. . [Online].