Corrigendum to "Atomic structures of grain boundaries for Si and Ge: A simulated annealing method with artificial-neural-network interatomic potentials" [J. Phys. Chem. Solid. 173 (2023) 111114]. (May 2023) - Yokoi, Tatsuya; Kato, Hirotaka; Oshima, Yu; Matsunaga, Katsuyuki