Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films. (March 2023)

• Record Type: Journal Article
• Authors: Yakovlev, N.N.; Almaev, A.V.; Nikolaev, V.I.; Kushnarev, B.O.; Pechnikov, A.I.; Stepanov, S.I.; Chikiryaka, A.V.; Timashov, R.B.; Scheglov, M.P.; Butenko, P.N.; Almaev, D.A.; Chernikov, E.V.
• Is Part Of: Materials today communications. Volume 34(2023)
• Publication Date: 2023-03
• Subjects: A. Films -- C. Electrical properties -- E. Sensors -- In2O3 -- Ga2O3 -- Gas sensors -- Low-resistivity -- Metal oxides; Materials science -- Periodicals; 620.11
• DOI: 10.1016/j.mtcomm.2022.105241
• Languages: English
• ISSNs: 2352-4928

Abstract

Abstract: The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2 O3 -Ga2 O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range of 150–550 °C In2 O3 -Ga2 O3 films are characterized by high responses, high speed of operation when exposed to H2, NH3, CO and O2 . A qualitative mechanism of gas sensitivity for the In2 O3 -Ga2 O3 mixed compounds films to gases was proposed. The gas-sensitive characteristics of In2 O3, κ(ε)-Ga2 O3 and In2 O3 -Ga2 O3 films were compared. The advantage of the In2 O3 -Ga2 O3 mixed compounds films compared with Ga2 O3 and In2 O3 films is a low base electrical resistivity with a relatively high gas sensitivity. Graphical Abstract: ga1