High‐Performance Solution‐Processed 2D P‐Type WSe2 Transistors and Circuits through Molecular Doping. Issue 7 (16th December 2022)

• Record Type: Journal Article
• Authors: Zou, Taoyu; Kim, Hyun‐Jun; Kim, Soonhyo; Liu, Ao; Choi, Min‐Yeong; Jung, Haksoon; Zhu, Huihui; You, Insang; Reo, Youjin; Lee, Woo‐Ju; Kim, Yong‐Sung; Kim, Cheol‐Joo; Noh, Yong‐Young
• Is Part Of: Advanced materials. Volume 35:Issue 7(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-12-16
• Subjects: chalcogenide layered p‐type semiconductors -- molecular doping -- solution process -- thin film transistors -- Van der Waals film -- WSe 2 nanosheets; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202208934
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Semiconducting ink based on 2D single‐crystal flakes with dangling‐bond‐free surfaces enables the implementation of high‐performance devices on form‐free substrates by cost‐effective and scalable printing processes. However, the lack of solution‐processed p‐type 2D semiconducting inks with high mobility is an obstacle to the development of complementary integrated circuits. Here, a versatile strategy of doping with Br2 is reported to enhance the hole mobility by orders of magnitude for p‐type transistors with 2D layered materials. Br2 ‐doped WSe2 transistors show a field‐effect hole mobility of more than 27 cm 2 V −1 s −1, and a high on/off current ratio of ≈10 7, and exhibits excellent operational stability during the on‐off switching, cycling, and bias stressing testing. Moreover, complementary inverters composed of patterned p‐type WSe2 and n‐type MoS2 layered films are demonstrated with an ultra‐high gain of 1280 under a driving voltage ( V DD ) of 7 V. This work unveils the high potential of solution‐processed 2D semiconductors with low‐temperature processability for flexible devices and monolithic circuitry. Abstract : Solution‐processed high‐performance p‐type WSe2 thin‐film transistor is successfully fabricated by Br2 ‐doping with a field‐effect hole mobility of more than 27 cm 2 V −1 s −1, and a high on/off current ratio of ≈10 7 . The resulting complementary inverters with patterned p‐type WSe2 and n‐type MoS2 layered films reaches an ultra‐high gain of 1280 under a driving voltage ( V DD ) of 7 V.