Cite
HARVARD Citation
Zhang, S. et al. (2022). Field Effect Transistor Sensors Based on In‐Plane 1T′/2H/1T′ MoTe2 Heterophases with Superior Sensitivity and Output Signals. Advanced functional materials. p. n/a. [Online].
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Zhang, S. et al. (2022). Field Effect Transistor Sensors Based on In‐Plane 1T′/2H/1T′ MoTe2 Heterophases with Superior Sensitivity and Output Signals. Advanced functional materials. p. n/a. [Online].