Fast and direct identification of SARS‐CoV‐2 variants via 2D InSe field‐effect transistors. Issue 2 (2nd January 2023)
- Record Type:
- Journal Article
- Title:
- Fast and direct identification of SARS‐CoV‐2 variants via 2D InSe field‐effect transistors. Issue 2 (2nd January 2023)
- Main Title:
- Fast and direct identification of SARS‐CoV‐2 variants via 2D InSe field‐effect transistors
- Authors:
- Xu, Duo
Li, Junji
Xiong, Yunhai
Li, Han
Yang, Jialin
Liu, Wenqiang
Jiang, Lianfu
Qu, Kairui
Zhao, Tong
Shi, Xinyu
Zhang, Shengli
Shan, Dan
Chen, Xiang
Zeng, Haibo - Abstract:
- Abstract: As the COVID‐19 pandemic evolves and new variants emerge, the development of more efficient identification approaches of variants is urgent to prevent continuous outbreaks of SARS‐CoV‐2. Field‐effect transistors (FETs) with two‐dimensional (2D) materials are viable platforms for the detection of virus nucleic acids (NAs) but cannot yet provide accurate information on NA variations. Herein, 2D Indium selenide (InSe) FETs were used to identify SARS‐CoV‐2 variants. The device's mobility and stability were ensured by atomic layer deposition (ALD) of Al2 O3 . The resulting FETs exhibited sub‐fM detection limits ranging from 10 –14 M to 10 – 8 M. The recognition of single‐nucleotide variations was achieved within 15 min to enable the fast and direct identification of two core mutations (L452R, R203M) in Delta genomes ( p < 0.01). Such capability originated from the trap states in oxidized InSe (InSe1− x O x ) after ALD, resulting in traps‐involved carrier transport responsive to the negative charges of NAs. In sum, the proposed approach might highly provide epidemiological information for timely surveillance of the COVID pandemic. Abstract : Currently, transmissible SARS‐CoV‐2 variants continuously evolve due to the frequent occurrence of single‐nucleotide variations (SNVs). We develop 2D InSe FETs for fast and direct identification of SARS‐CoV‐2 variants. In addition to the sub‐fM detection limit, the bio‐FETs can directly recognize the difference betweenAbstract: As the COVID‐19 pandemic evolves and new variants emerge, the development of more efficient identification approaches of variants is urgent to prevent continuous outbreaks of SARS‐CoV‐2. Field‐effect transistors (FETs) with two‐dimensional (2D) materials are viable platforms for the detection of virus nucleic acids (NAs) but cannot yet provide accurate information on NA variations. Herein, 2D Indium selenide (InSe) FETs were used to identify SARS‐CoV‐2 variants. The device's mobility and stability were ensured by atomic layer deposition (ALD) of Al2 O3 . The resulting FETs exhibited sub‐fM detection limits ranging from 10 –14 M to 10 – 8 M. The recognition of single‐nucleotide variations was achieved within 15 min to enable the fast and direct identification of two core mutations (L452R, R203M) in Delta genomes ( p < 0.01). Such capability originated from the trap states in oxidized InSe (InSe1− x O x ) after ALD, resulting in traps‐involved carrier transport responsive to the negative charges of NAs. In sum, the proposed approach might highly provide epidemiological information for timely surveillance of the COVID pandemic. Abstract : Currently, transmissible SARS‐CoV‐2 variants continuously evolve due to the frequent occurrence of single‐nucleotide variations (SNVs). We develop 2D InSe FETs for fast and direct identification of SARS‐CoV‐2 variants. In addition to the sub‐fM detection limit, the bio‐FETs can directly recognize the difference between complementary and Delta variant nucleic acid sequences with SNVs. We contribute the capability to the oxidation of InSe (InSe1− x O x ). Moreover, the trap states inside make the carrier transport of our bio‐FETs more sensitive to the E F shift from the negative charges of NA sequences. … (more)
- Is Part Of:
- InfoMat. Volume 5:Issue 2(2023)
- Journal:
- InfoMat
- Issue:
- Volume 5:Issue 2(2023)
- Issue Display:
- Volume 5, Issue 2 (2023)
- Year:
- 2023
- Volume:
- 5
- Issue:
- 2
- Issue Sort Value:
- 2023-0005-0002-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2023-01-02
- Subjects:
- 2D InSe -- field‐effect transistors -- SARS‐CoV‐2 -- single‐nucleotide variations -- trap states
Materials -- Periodicals
Information technology -- Periodicals
Smart materials -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/ ↗
https://onlinelibrary.wiley.com/loi/25673165 ↗ - DOI:
- 10.1002/inf2.12398 ↗
- Languages:
- English
- ISSNs:
- 2567-3165
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 25985.xml