Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application (Adv. Funct. Mater. 8/2023). (16th February 2023)

• Record Type: Journal Article
• Authors: Mishra, Dhananjay; Mokurala, Krishnaiah; Kumar, Ajit; Seo, Seung Gi; Jo, Hyeon Bin; Jin, Sung Hun
• Is Part Of: Advanced functional materials. Volume 33:Number 8(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-02-16
• Subjects: CuI‐based nonvolatile memory -- forming‐free -- photo responsive RRAM with multi‐level data storages -- ultra‐low power RRAM devices; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202370041
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : CuI‐Based Nonvolatile Memory In article number 2211022, Sung Hun Jin, and co‐workers explore the light mediated resistive switching of CuI based, resistive random‐access memory device in terms of the enhancement scheme for device reliability, current conduction and switching mechanism via low temperature study. This potentially opens a new paradigm for nonvolatile memory technologies with high density multibit data storage.