Cite
HARVARD Citation
Niu, H. et al. (2023). Effects of pressure on GaN growth in a specific warm-wall MOCVD reactor. CrystEngComm. 25 (8), pp. 1263-1269. [Online].
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Niu, H. et al. (2023). Effects of pressure on GaN growth in a specific warm-wall MOCVD reactor. CrystEngComm. 25 (8), pp. 1263-1269. [Online].