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HARVARD Citation
Xiang, M. et al. (2023). Electrical characterization and temperature reliability of 4H-SiC Schottky barrier diodes after Electron radiation. Microelectronics and reliability. p. . [Online].
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Xiang, M. et al. (2023). Electrical characterization and temperature reliability of 4H-SiC Schottky barrier diodes after Electron radiation. Microelectronics and reliability. p. . [Online].