Dirac cones in graphene grown on a half-filled 4d-band transition metal. (5th March 2023)

• Record Type: Journal Article
• Authors: Martínez-Galera, Antonio J.; Guo, Haojie; Jiménez-Sánchez, Mariano D.; Michel, Enrique G.; Gómez-Rodríguez, José M.
• Is Part Of: Carbon. Volume 205(2023)
• Page Start: 294
• Page End: 301
• Publication Date: 2023-03-05
• Subjects: Graphene -- STM -- ARPES -- XPS -- Tunneling height barriers; Carbon -- Periodicals; Carbone -- Périodiques; Koolstof; Toepassingen; Electronic journals; 546.681
• DOI: 10.1016/j.carbon.2023.01.004
• Languages: English
• ISSNs: 0008-6223

Abstract

Abstract: New opportunities for structural and electronic properties engineering of graphene can be achieved by tuning the interfacial interaction, which is ruled by the interplay between d -band filling and geometry of the support. Here, is demonstrated the growth of graphene, featuring Dirac cones around the Fermi level, on the rectangular (110) surfaces of Rh, a half-filled 4 d -band transition metal element. The analysis of the structural properties by low energy electron diffraction (LEED) and scanning tunneling microscopy (STM) shows that domains with a continuum of possible graphene-substrate orientations with angular scatter of around 10° coexist in graphene/Rh(110) surfaces. Within each domain, surface structure is characterized by a distinct stripe-like moiré pattern. The interfacial chemistry analysis, by microprobeX-ray photoelectron spectroscopy (μ-XPS), of all the rotational domains studied, demonstrates the existence of two main levels of interfacial interaction strength, similar to previously reported graphene-metal systems characterized by the absence of Dirac cones around the Fermi level. However, the band structures of these domains probed by micro angle resolved photoelectron spectroscopy (μ-ARPES) present Dirac cones, with Fermi velocities comparable with those previously reported on weakly coupled graphene layers. Both the unique properties of graphene/Rh(110) surfaces and the prospect to obtain novel graphene-metal interfaces through the interplay between d -band filling and geometry, are expected to open new opportunities to study phenomena up to now masked behind the interaction with the substrate. Graphical abstract: Image 1 Highlights: Two main levels of interfacial interaction strength are found on graphene monolayers grown on Rh(110) supports. Graphene monolayers can keep their Dirac cones close to Fermi level under a moderately strong interaction with the substrate. The interplay between d -band filling and lattice geometry mismatch could provide a platform for graphene engineering.