Toward smart flexible self-powered near-UV photodetector of amorphous Ga2O3 nanosheet. (February 2023)

• Record Type: Journal Article
• Authors: Zhang, Jie; Liu, Fengjing; Liu, Dong; Yin, Yanxue; Wang, Mingxu; Sa, Zixu; Sun, Li; Zheng, Xiaoxin; Zhuang, Xinming; Lv, Zengtao; Mu, Wenxiang; Jia, Zhitai; Tan, Yang; Chen, Feng; Yang, Zai-xing
• Is Part Of: Materials today physics. Volume 31(2023)
• Publication Date: 2023-02
• Subjects: Amorphous Ga2O3 nanosheet -- Heterojunction -- Self-powered photodetector -- Flexible photodetector -- Near-UV photodetector; Materials science -- Periodicals; Physics -- Periodicals; Electronic journals; 530.41
• DOI: 10.1016/j.mtphys.2023.100997
• Languages: English
• ISSNs: 2542-5293

Abstract

Abstract: Recently, the thin amorphous Ga2 O3 nanosheet attracts enormous interest in dielectric and passivation materials, but it is still lack of the study about its photodetection performance. In this work, the amorphous Ga2 O3 nanosheet is peeled off from the Ga solid-melt surface. Its amorphous characteristic is verified by selected area electron diffraction and X-ray diffraction. Owing to the limited absorption ability and abundant defect states, the amorphous Ga2 O3 nanosheet photodetector shows a low photocurrent and slow response time even at a bias voltage. For improving the photodetection performance, PbI2 nanosheet is selected to be grown on the surface of amorphous Ga2 O3 nanosheet. Owing to the built-in electric field at the interface, the Ga2 O3 /PbI2 heterojunction photodetector can work at a bias voltage of 0 V, along with a larger photocurrent of 1.6 nA and faster response times of about 2 ms (rise time) and 3 ms (decay time). When configured into the flexible photodetector, it also displays excellent self-powered photoresponse characteristic and excellent mechanical flexibility. This work paves the way for the development of high-performance flexible optoelectronic devices. Graphical abstract: Image 1 Highlights: The near-UV photoelectric characteristics of large-scale ultra-thin amorphous Ga2 O3 nanosheet are studied for the first time. Ga2 O3 /PbI2 heterojunction is constructed to improve the photodetection performance of amorphous Ga2 O3 nanosheet. The photodetector exhibits excellent self-powered photoresponse characteristics. When configured into fexible photodetector, Ga2 O3 nanosheet displays excellent mechanical flexibility and bending endurance.