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HARVARD Citation
Kang, H. et al. (2023). Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors. Materials today physics. p. . [Online].
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Kang, H. et al. (2023). Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors. Materials today physics. p. . [Online].