Structural design of BaSi2 solar cells with a-SiC electron-selective transport layers. (1st May 2023)

• Record Type: Journal Article
• Authors: Du, Rui; Aonuki, Sho; Hasebe, Hayato; Kido, Kazuki; Takenaka, Haruki; Toko, Kaoru; Mesuda, Masami; Suemasu, Takashi
• Is Part Of: Japanese journal of applied physics. Volume 62:Number SD(2023)
• Publication Date: 2023-05-01
• Subjects: solar cell -- BaSi2 -- electron transport layer -- hole transport layer -- a-SiC; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/acab09
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Sputter-deposited polycrystalline BaSi2 films capped with a 5 nm thick a-SiC layer showed high photoresponsivity. This means that the a-SiC layer functions as a capping layer to prevent surface oxidation of BaSi2 . Based on the measured absorption edge, the electron affinity of the a-SiC layer, and the work function of the TiN layer, the a-SiC is considered to act as an electron transport layer (ETL) for the BaSi2 light absorber layer/a-SiC interlayer/TiN contact structure in a BaSi2 solar cell. Using a 10 nm thick p + -BaSi2 layer as a hole transport layer, we investigated the effect of the BaSi2 /a-SiC layered structure on the device performance of a BaSi2 -pn homojunction solar cell by a one-dimensional device simulator (AFORS-HET v2.5). The a-SiC ETL effectively separates photogenerated carriers and allows transport of electrons while blocking holes to achieve an efficiency of 22% for a 500 nm thick BaSi2 light absorber layer.