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HARVARD Citation
Lee, S. et al. (2023). Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect. Japanese journal of applied physics. p. . [Online].
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Lee, S. et al. (2023). Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect. Japanese journal of applied physics. p. . [Online].