Demonstration of B-ion-implanted p-BaSi2/n-Si heterojunction solar cells. (1st May 2023)

• Record Type: Journal Article
• Authors: Aonuki, Sho; Narita, Shunsuke; Takayanagi, Kaori; Iwai, Ai; Yamashita, Yudai; Toko, Kaoru; Suemasu, Takashi
• Is Part Of: Japanese journal of applied physics. Volume 62:Number SD(2023)
• Publication Date: 2023-05-01
• Subjects: solar cell, ion implantation, BaSi2, post-annealing, activation; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/acab08
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The implantation of B atoms into BaSi2 epitaxial films grown by molecular beam epitaxy was performed to form p-type BaSi2 films. It was revealed by Raman spectroscopy that the ion-implantation damage induced in the implanted BaSi2 films was recovered by post-annealing at 600 °C or higher temperatures for 64 min. The hole concentration increased up to 3.1 × 10 18 cm −3 at room temperature, indicating that B-ion-implanted p-BaSi2 films are applicable as a hole transport layer. The B-ion-implanted p-BaSi2 /n-Si heterojunction solar cells showed rectifying current-voltage characteristics under AM1.5 G illumination and the internal quantum efficiency reached 72% at the wavelength of 900 nm. The conversation efficiency was 2.2%. These results open new routes for the formation methods of BaSi2 solar cells.