Cite
HARVARD Citation
Sahoo, S. et al. (2021). Z‐shaped gate TFET with horizontal pocket for improvement of electrostatic behavior. International journal of numerical modelling. p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Sahoo, S. et al. (2021). Z‐shaped gate TFET with horizontal pocket for improvement of electrostatic behavior. International journal of numerical modelling. p. n/a. [Online].