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HARVARD Citation
Paskaleva, A. et al. (n.d.). Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time. Materials science in semiconductor processing. pp. 124-131. [Online].
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Paskaleva, A. et al. (n.d.). Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time. Materials science in semiconductor processing. pp. 124-131. [Online].