Cite
HARVARD Citation
Ye, F. et al. (2023). In Quest of Low‐Leakage Dynamic Random Access Memory Enabled by Doped TiO2 Dielectrics. Advanced theory and simulations. 6 (2), p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Ye, F. et al. (2023). In Quest of Low‐Leakage Dynamic Random Access Memory Enabled by Doped TiO2 Dielectrics. Advanced theory and simulations. 6 (2), p. n/a. [Online].