Modulating Quantum Interference Between Destructive and Constructive States in Double N‐Substituted Single Molecule Junctions (Adv. Electron. Mater. 2/2023). (10th February 2023)

• Record Type: Journal Article
• Authors: Chen, Zi‐Zhen; Wu, Shun‐Da; Lin, Jin‐Liang; Chen, Li‐Chuan; Cao, Jing‐Jing; Shao, Xiangfeng; Lambert, Colin J.; Zhang, Hao‐Li
• Is Part Of: Advanced Electronic Materials. Volume 9:Number 2(2023)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2023-02-10
• Subjects: molecular electronic -- nonequilibrium Green's function -- quantum interferences -- scanning tunneling microscopes -- single‐molecule devices; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202370010
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Quantum Interferences In article number 2201024, Xiangfeng Shao, Colin J. Lambert, Hao‐Li Zhang, and co‐workers present the significant modulation effect of double N‐substitution on quantum interference (QI) in meta‐phenylene ethylene oligomer molecular devices, reveal how two N‐atoms synergistically modulate the molecular conductance between destructive QI and constructive QI states. The findings of this work pave a path toward utilization of heterocyclic aromatic hydrocarbons in molecular electronics.